Studies on plasma assisted molecular beam epitaxial growth of GaN-based multilayer heterostructures on Si for photodetector application by Zheng, Yi

“…Tunability of band gap and the possibility of formation of heterostructures with group III-nitride materials allow the design of complex structures to detect both UV and infra-red (IR) spectral regimes (multi band) on a single chip. By growing AlGaN/GaN multiple quantum well layers, IR detector can also be obtained, which means IR and UV detector can be achieved using the same material. …”
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