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    Electroless copper deposition as a seed layer on TiSiN barrier by Chen, Z., Xu, S., Chan, L., See, K. H., Law, S. B., Ee, Elden Yong Chiang

    Published 2012
    “…Electroless deposition of copper as a seeding technology has received considerable attention in back-end-of-line device fabrication. This work explores the effects of plasma processing parameters such as argon gas flow rate and nitrogen plasma treatment time on the properties of electrolessly plated Cu on TiSiN barrier layers. …”
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    Journal Article