Showing 1,321 - 1,340 results of 10,370 for search '((shine OR ((spine OR sline) OR five)) OR ((((ling OR pinge) OR pink) OR ming) OR pin))', query time: 0.25s Refine Results
  1. 1321

    Environmentally friendly solution route to kesterite Cu2ZnSn(S,Se)4 thin films for solar cell applications by Ho, John C. W., Zhang, Tianliang, Wong, Lydia Helena, Lam, Yeng Ming, Li, Zhenggang, Lee, Kian Keat, Zeng, Xin

    Published 2014
    “…The CZTSSe solar cells were prepared using the binary sulfide nanoparticles films annealed in Se vapor and the cells showed an encouraging efficiency of 5.12% (Voc = 378 mV, Jsc = 26.2 mA/cm2 and FF = 51.7%). …”
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    Journal Article
  2. 1322

    Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals by Yang, Ming, Liu, Yang, Ding, Liang, Wong, Jen It, Liu, Zhen, Zhang, Sam, Zhang, Wali, Zhu, Fu Rong, Chen, Tupei

    Published 2010
    “…The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. …”
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    Journal Article
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    Understanding perspectives and research trends in down syndrome neuropathogenesis: a bibliometric analysis by Huang, Tan, Lam, Xin-Jieh, Lim, Chong-Teik, Jusoh, Norhazlin, Fakurazi, Sharida, Cheah, Pike-See, Ling, King-Hwa

    Published 2024
    “…Analyses included co-authorship, co-citation, co-occurrence, cooperative network, reference, and keyword burst citation. Analysing 5,082 papers, the U.S. demonstrated prominence with the highest number of research organisations and citations. …”
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    Article
  12. 1332

    A SnO2 nanoparticle/nanobelt and Si heterojunction light-emitting diode by Chen, Rui, Sun, Handong, Dong, Zhili, Ling, Bo, Sun, Xiaowei, Zhao, Jun Liang, Ke, Chang, Tan, Swee Tiam

    Published 2011
    “…A thin SiO2 intermediate layer was found to be crucial in achieving light emission from a n-SnO2/p-Si heterojunction with large valence band offset (ca. 2.96 eV), by which sufficient potential-energy difference can be maintained between SnO2 and Si, thus facilitating the tunneling injection of holes.…”
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    Journal Article
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