Showing 441 - 460 results of 538 for search '((spinae OR (ching OR chiang)) OR ((espina OR (pingna OR pingat)) OR (pin OR swing)))', query time: 0.20s Refine Results
  1. 441
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    Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment by Chen, Jinxin, Liu, Bingyan, Gu, Yang, Li, Bin

    Published 2024
    “…With the optimal plasma pre-treatment (i.e., Ar plasma, 100 W, 60 s), the resulting β-Ga2O3 nanosheet field-effect transistors (FETs) show effective Ohmic contact (i.e., contact resistance RC of 104 Ω·mm) without any post-annealing, which leads to competitive device performance such as a high current on/off ratio (>107), a low subthreshold swing (SS, 249 mV/dec), and acceptable field-effect mobility ((Formula presented.), ~21.73 cm2 V−1 s−1). …”
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    Journal Article
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    Analog smart I/O pads by Tan, Shyue Mei.

    Published 2009
    “…ESD is an increasingly significant problem in integrated circuit design as increasing pin counts and faster circuit speeds compound the need for more and better reliable ESD protection. …”
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    Final Year Project (FYP)
  12. 452

    Tribological properties of wax microcapsule modified polymers by Ang, Ping Lon

    Published 2013
    “…The tribology test uses the Pin-On-Disk wear test method and the default tribometer settings used in this project were set at 2000m sliding distance, 40cm/s linear speed and 3N linear load. …”
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    Final Year Project (FYP)
  13. 453

    Effect of emulsion temperature on physical properties of palm oil‐based margarine by Miskandar, M. S., Che Man, Y. B., Yusoff, M. S. A., Abdul Rahman, R.

    Published 2002
    “…The emulsion temperatures studied were 40, 45, and 50°C, with other parameters such as emulsion flow rates, tube cooler temperature, and pin rotor speed kept constant. The SFC developed during processing and storage at 28°C was measured to evaluate the quality of margarine. …”
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    Article
  14. 454

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…A thin layer of oxide between the metal gate and the thin InAlN barrier and form a metal-insulator-semiconductor (MIS) gate in the Planar nanostrip-channel GaN HEMT, gate leakage current was reduced and thus increase the gate voltage swing and drain current swing. The results show that the Planar nanostrip-channel Al2O3/InAlN/GaN MISHEMTs is able to work at up to Vg = +4 V and the linearity performance was further improved. …”
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    Thesis
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