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    Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate by Dolmanan, S. B., Teo, S. L., Arulkumaran, Subramaniam, Lin, Vivian Kaixin, Ng, Geok Ing, Vicknesh, Sahmuganathan, Tan, Joyce Pei Ying, Kumar, M. Krishna, Tripathy, Sudhiranjan

    Published 2013
    “…To the best of our knowledge, the demonstration of AlGaN/GaN transistors on a thin SOI substrate is rather limited. In this study, we report on the growth and characteristics of AlGaN/GaN heterostructures (HSs) on 150-mm diameter Si(111) and SOI(111) substrates. …”
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    Conference Paper
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