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    Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis by Fernández-Rojas, Carlos J., Morral, Anna Fontcuberta i., Mata, Maria de la, Magen, Cesar, Gazquez, Jaume, Utama, Muhammad Iqbal Bakti, Heiss, Martin, Lopatin, Sergei, Furtmayr, Florian, Peng, Bo, Morante, Joan Ramon, Rurali, Riccardo, Eickhoff, Martin, Xiong, Qihua, Arbiol, Jordi

    Published 2013
    “…Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). …”
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    Journal Article
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