Showing 161 - 180 results of 5,167 for search '((sspinge OR find) OR (((swing OR swing) OR (spina OR sspinal)) OR pin))', query time: 0.17s Refine Results
  1. 161

    Structure-behaviour correlations between two genetically closely related snail species by Le Ferrand, Hortense, Morii, Yuta

    Published 2021
    “…When under attack from a beetle, K. editha snails retract into their shells whereas K. gainesi snails swing their shells. In this paper, we looked at the microstructure, composition, morphology and mechanics of the shells of these two species and discuss potential relationships between material structure and the snails’ defence behaviours. …”
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    Journal Article
  2. 162

    Design, fabrication and characterization of integrated electronic devices based on wafer-scale 2D materials by Zhao, Guangchao

    Published 2019
    “…Other key features to evaluate FETs including carrier mobility and subthreshold swing will also be extracted from the test results.…”
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    Final Year Project (FYP)
  3. 163

    Evaluation of structures for cracks due to dynamic loads by Zaw, Hein Lin

    Published 2016
    “…The effects of various dynamic parameters such as changing the drop-weight, drop-height, angle of free swing, walking and jumping were investigated. This report also discusses the usage of a wireless communication system that monitors the structure by integrating a strain gauge sensor. …”
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    Final Year Project (FYP)
  4. 164

    Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs) by Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Dong, Yuan, Lee, Kwang Hong, Wicaksono, Satrio, Liang, Gengchiau, Yoon, Soon-Fatt, Antoniadis, Dimitri, Yeo, Yee-Chia, Gong, Xiao

    Published 2019
    “…InGaAs n-FETs with an ION/IOFF ratio of more than 106 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. …”
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    Journal Article
  5. 165

    Room-temperature fabricated thin-film transistors based on compounds with lanthanum and main family element boron by Xiao, Peng, Huang, Junhua, Dong, Ting, Xie, Jianing, Yuan, Jian, Luo, Dongxiang, Liu, Baiquan

    Published 2018
    “…LaBx-TFT without any intentionally annealing steps exhibited a saturation mobility of 0.44 cm2·V−1·s−1, which is a subthreshold swing (SS) of 0.26 V/decade and a Ion/Ioff ratio larger than 104. …”
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    Journal Article
  6. 166

    Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels by Tang, L. J., Ho, C. K. F., Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang, Chi, Dong Zhi, Chin, Yoke King, Lee, Pooi See

    Published 2012
    “…The transistors exhibit good Ion/Ioff characteristics, along with fully controlled shortchannel effects revealed by low drain-induced barrier lowering (~10 mV/V) and near-ideal subthreshold swing (~60 mV/dec). …”
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    Journal Article
  7. 167

    The eagle and the panda : an owl's view from Southeast Asia by Desker, Barry

    Published 2022
    “…The United States' rebalancing to Asia, initially depicted as a "pivot" to the Pacific, is less a swing away from the Middle East and West Asia than a shift of U.S. focus to East Asia, following the winding down of the wars in Iraq and Afghanistan. …”
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    Journal Article
  8. 168

    India’s ‘gas renaissance’ - rhetoric versus reality by Sen, A

    Published 2015
    “…<p>Most general discussion on the future of the market for internationally traded gas focuses on the ‘swing towards Asia’ – specifically, China and India are highlighted as major drivers of demand. …”
    Journal article
  9. 169

    Editable supercapacitors with customizable stretchability based on mechanically strengthened ultralong MnO2 nanowire composite by Lv, Zhisheng, Luo, Yifei, Tang, Yuxin, Wei, Jiaqi, Zhu, Zhiqiang, Zhou, Xinran, Li, Wenlong, Zeng, Yi, Zhang, Wei, Zhang, Yanyan, Qi, Dianpeng, Pan, Shaowu, Loh, Xian Jun, Chen, Xiaodong

    Published 2020
    “…As a representative of concept for system integration, the editable supercapacitors are integrated with a strain sensor, and the system exhibits a stable sensing performance even under arm swing. Being highly stretchable, easily programmable, as well as connectable in series and parallel, an editable supercapacitor with customizable stretchability is promising to produce stylish energy storage devices to power various portable, stretchable, and wearable devices.…”
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    Journal Article
  10. 170

    Synthesized tin-activated carbon adsorbent for purer and cheaper hydrogen by Iyuke, S.E.

    Published 2001
    “…To achieve this, activated carbon (AC)-SnO2 adsorbent was synthesized and used in a pressure swing adsorption (PSA) system. Consequently, 34.57% SnCl2.2H2O salt as a tin ion precursor, was impregnated onto activated carbon to improve its adsorptive interaction with CO. …”
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    Article
  11. 171

    Posture control and balance for quality of walking in rehabilitation by Li, Lei

    Published 2016
    “…It is therefore necessary to find ways to improve user-independence which requires human effort to support balance during walking with lower-limb assistive devices. …”
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    Thesis
  12. 172

    Ohmic contact formation to β-Ga2O3 nanosheet transistors with Ar-containing plasma treatment by Chen, Jinxin, Liu, Bingyan, Gu, Yang, Li, Bin

    Published 2024
    “…With the optimal plasma pre-treatment (i.e., Ar plasma, 100 W, 60 s), the resulting β-Ga2O3 nanosheet field-effect transistors (FETs) show effective Ohmic contact (i.e., contact resistance RC of 104 Ω·mm) without any post-annealing, which leads to competitive device performance such as a high current on/off ratio (>107), a low subthreshold swing (SS, 249 mV/dec), and acceptable field-effect mobility ((Formula presented.), ~21.73 cm2 V−1 s−1). …”
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    Journal Article
  13. 173

    InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

    Published 2018
    “…A thin layer of oxide between the metal gate and the thin InAlN barrier and form a metal-insulator-semiconductor (MIS) gate in the Planar nanostrip-channel GaN HEMT, gate leakage current was reduced and thus increase the gate voltage swing and drain current swing. The results show that the Planar nanostrip-channel Al2O3/InAlN/GaN MISHEMTs is able to work at up to Vg = +4 V and the linearity performance was further improved. …”
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    Thesis
  14. 174

    Design and investigation of air-cooled heat sinks using 3D printing technology by Lim, Ming Chong

    Published 2016
    “…This study presents the heat transfer performance of five pin fin heat sinks that have been fabricated using Selective Laser Melting. …”
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    Final Year Project (FYP)
  15. 175
  16. 176

    Study of planning and operational aspects of tidal in-stream power generation by Mahda J. Jahromi

    Published 2013
    “…Another paper which I found very inspiring at the beginning of this work was the paper by Biswarup, et. al. of the Imperial College of London who did a thorough investigation on the performance of an Archimedes Wave Swing (AWS) and its effect on the neighboring networks[19]. …”
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    Thesis
  17. 177
  18. 178
  19. 179

    Development of advanced Fe-based oxygen carriers for chemical looping applications by Fan, Qianwenhao

    Published 2024
    “…All the perovskite structured oxygen carriers showed excellent cyclic stability over pressure swing cycles at 500 °C, suggesting their suitability for long-term operation. …”
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    Thesis-Doctor of Philosophy
  20. 180