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  1. 21

    Design and simulation of mid-infrared laser by Lin, JunJie

    Published 2024
    “…In this project we will be using Gallium Indium Antimonide (GalnSb) as our quantum well material.…”
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    Final Year Project (FYP)
  2. 22

    Design of a GaN-based power converter by Pek, Jonas

    Published 2021
    “…With the rapid development of gallium nitride (GaN) based system technology, it is now possible to design inverters with better performance than Si-based inverters. …”
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    Final Year Project (FYP)
  3. 23
  4. 24

    Impedance and parasitic capacitance analysis of SiC MOSFETs by Tan, Wei Jie

    Published 2020
    “… [1] Both power MOSFETs and IGBTs are reaching their theoretical limits and suffer from energy losses, prompting the need for some new technologies, namely Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors. …”
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    Final Year Project (FYP)
  5. 25

    Surface modification of oxide capping layers on nickel catalyst for high performance hydrogen applications by Khairul Syafiq Bin Shapuan

    Published 2024
    “…This project aims to develop and study the SDC interlayer thickness for the fabrication of Nickel and Yttria-Stabilised Zirconia (Ni-YSZ) anode onto a Lanthanum Strontium Gallium Magnesium (LSGM) electrolyte base. The purpose is to prevent the formation of La2Zr2O7 and LaNiO3 phases due to Ni-YSZ and LSGM reacting during sintering. …”
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    Final Year Project (FYP)
  6. 26

    Bis(imino)phenyl group 13 - 14 complexes by Seow, Celestine Su Yi

    Published 2018
    “…Chapter 1 describes the synthesis and characterization of indium and thallium compounds supported by bis(imino)aryl pincer ligands with Ar* (Ar* = 4-Me-2,6-CHPh2-C6H2) and tBu substituents. …”
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    Thesis
  7. 27
  8. 28

    Room temperature solid-state quantum emitters in the telecom range by Zhou, Yu, Wang, Ziyu, Rasmita, Abdullah, Kim, Sejeong, Berhane, Amanuel, Bodrog, Zoltán, Adamo, Giorgio, Gali, Adam, Aharonovich, Igor, Gao, Wei-bo

    Published 2018
    “…The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.…”
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    Journal Article
  9. 29

    Printable superelastic conductors with extreme stretchability and robust cycling endurance enabled by liquid-metal particles by Wang, Jiangxin, Cai, Guofa, Li, Shaohui, Gao, Dace, Xiong, Jiaqing, Lee, Pooi See

    Published 2020
    “…It is demonstrated that by electrically anchoring conductive fillers with eutectic gallium indium particles (EGaInPs), significant improvement in stretchability and durability can be achieved in stretchable conductors. …”
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    Journal Article
  10. 30

    Optimizing selenization conditions of Cu2CdSn(S,Se)4 by Wong, Jia Mian

    Published 2022
    “…However, its efficiency is still significantly lower than existing thin film solar cells available in the market like Copper Indium Gallium Selenide (CIGS) and Cadmium Telluride (CdTe). …”
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    Final Year Project (FYP)
  11. 31

    Power management system design and optimization for European Student Moon Orbitor (ESMO) by Muhammad Dzahir Mohamed Zain Affandi.

    Published 2013
    “…The main source of power for ESMO is the Gallium Arsenide solar array which converts solar energy from the Sun into usable electricity. …”
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    Final Year Project (FYP)
  12. 32
  13. 33

    Optical properties of ultrathin metal oxide and metal films : effect of free electrons, quantum confinement and localized surface plasmon resonance by Li, Xiao Dong

    Published 2016
    “…Ultrathin metal oxide thin films including undoped ZnO, Al-doped ZnO (AZO) and amorphous indium gallium zinc oxide (a-IGZO) were deposited using RF magnetron sputtering technique. …”
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    Thesis
  14. 34

    Functional properties of Yttrium Iron Garnett thin films on graphene-coated Gd3Ga5O12 for remote epitaxial transfer by Leontsev, S., Shah, P.J., Kum, H.S., McChesney, J.L., Rodolakis, F.M., van Veenendaal, M., Velez, M., Rao, R., Haskel, D., Kim, J., Reed, A.N., Page, M.R.

    Published 2024
    “…YIG is predominantly grown on lattice matched Gadolinium Gallium Garnet (GGG) substrates, but by utilizing the remote epitaxy technique, high quality YIG films can be transferred from GGG onto another substrate such as piezoelectric Lithium Niobate (LN). …”
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    Article
  15. 35

    Ordered hybrid nanoneedle arrays for gas sensing by Liu, Hai

    Published 2014
    “…A mechanism of nanoneedle formation is proposed considering the alloying process during incident gallium ion irradiation to the silicon substrate coated with a thin layer of a sufficient low sputter rate. …”
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    Thesis
  16. 36

    Colloidal quantum dot light-emitting diode architectures for high performance by Leck, Kheng Swee

    Published 2016
    “…In addition, in the thesis, we used gallium-doped zinc oxide (GZO) to replace tin-doped indium oxide (ITO) used as the electrode in QD-LEDs due to the increasingly expensive raw materials of ITO. …”
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    Thesis
  17. 37

    Development of selenization/sulfurization-free CuIn(S,Se)2 for thin film solar cells applications by Wang, Mengxi

    Published 2015
    “…Of all the different solar cell technology, copper-indium-gallium sulfide/selenide (CIGS) solar cell is one of the most promising thin film solar cells because of its high optical absorption coefficient, suitable band gap for harvesting a wide range of visible light from the sun as well as some unique electrical and optical properties. …”
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    Thesis
  18. 38

    Development of highly efficient organic and perovskite solar cells by Li, Xianqiang

    Published 2018
    “…So far, the dominant PV technology is based on inorganic semiconductor materials, such as Silicon (Si) and Gallium arsenide (GaAs). Despite the high power conversion efficiency, these PV technologies require strict manufacturing processes and have very high materials and fabrication costs, thus preventing them from being widely accepted. …”
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    Thesis
  19. 39

    Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon by Tham, Wai Hoe

    Published 2016
    “…Among the III-V compounds, Gallium Nitride (GaN) is a promising alternative due to its superior inherent material properties. …”
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    Thesis