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61
Electrical and optoelectronic studies of semiconductor nanostructures
Published 2012“…If an nc-Si layer exists in the spacing regions between two MOS devices with nc-Si embedded in the gate oxide, the charging of one of the devices can induce a large flat-band voltage shift in the other device. …”
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Thesis -
62
Fabrication and characterization of Algan/Gan high electron mobility transistors on silicon
Published 2016“…Semiconductors with wide band gap properties such as the III-V compound, SiC and diamond have been successfully used in high power electronic applications. …”
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Thesis