InAlN/GaN high electron mobility transistors on Si for RF applications by Xing, Weichuan

“…Sub-100 nm gate was developed using electron beam lithography (EBL) technology to minimize gate induced intrinsic delay. …”
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2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure by Patwal, Shashank

“…This was followed by the growth and characterization of AlN/GaN/AlN double heterojunction (DH) HEMT layer structures on semi-insulating 4H-SiC substrates by plasma assisted molecular beam epitaxy (PA-MBE). The higher thermal conductivities of AlN and 4H-SiC are likely to improve heat dissipation, thus providing greater thermal stability and lesser device deterioration due to self-heating. …”
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Investigations into high resolution imaging and contouring for diagnostic bio-applications by Valiyambath, Krishnan Mohankumar

“…Thermal perturbation of the target tissue with infrared beam was used to effect the required change in the bio-speckle pattern. …”
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