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    Effect of prebonding anneal on the microstructure evolution and Cu–Cu diffusion bonding quality for three-dimensional integration by Peng, L., Zhang, L., Li, H.Y., Lim, Dau Fatt, Tan, Chuan Seng

    Published 2013
    “…As compared with the control wafer pair with a prebonding anneal at 300°C for 1 h in N2, the wafer pair without a prebonding anneal showed greater improvement in void density based on c-mode scanning acoustic microscopy (c-SAM). Dicing yield and shear strength were also enhanced when a prebonding anneal was not applied. …”
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    Journal Article
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