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  1. 1
    Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy

    Studies on GaN based HEMT heterostructures on 100-mm silicon grown by molecular beam epitaxy by Ravikiran Lingaparthi

    Published 2015
    “…The 2nd GaN buffer was grown on top of the SMLs. Heterostructures grown using AlN/GaN SMLs intrinsically contain buried cracks in them. …”
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    Thesis
  2. 2
    Development of carbon nanotubes for vacuum electronics application

    Development of carbon nanotubes for vacuum electronics application by Lim, Yu Dian

    Published 2018
    “…To grow CNTs in separated islands, CNTs are grown on Si and SiO2 surfaces at growth temperatures from 760 to 880 °C. …”
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    Thesis

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