16.100 Aerodynamics, Fall 2002 by Darmofal, David L.

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Drag reduction in fish-like locomotion by Barrett, D.S., Triantafyllou, M.S., Yue, D.K.P., Grosenbaugh, M.A., Wolfgang, M.J.

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Development of DragGAN application for photographers by Takesawa, Saori

“…This intuitive functionality not only streamlines the editing process but also eliminates the need for extensive image manipulation skills, catering to photographers of all proficiency levels. However, the technical intricacies and terminology of DragGAN limits its accessibility to users familiar with the AI field, posing barriers of its adoption among the photography community. …”
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WGS.110 Sexual and Gender Identities, Fall 2010 by Surkan, K.J.

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SP.406 / WGS.406 Sexual and Gender Identities, Fall 2006 by Surkan, Kim

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A low-cost innovation design for portable rubbish cage trap (PRCT) in drain system by Ahmad, Noor Aliza, Zainal, Intan, Md Ali, Zarina

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Distribution and cycling of terrigenous dissolved organic carbon in peatland-draining rivers and coastal waters of Sarawak, Borneo by Martin, Patrick, Cherukuru, Nagur, Tan, Ashleen S. Y., Sanwlani, Nivedita, Mujahid, Aazani, Müller, Moritz

“…We present the first ever seasonally resolved measurements of DOC concentration and chromophoric dissolved organic matter (CDOM) spectra for six peatland-draining rivers and coastal waters in Sarawak, north-western Borneo. …”
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Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices by Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong

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Gate-all-around nanowire FET sensors with ultrahigh sensitivity and low noise by Pushpapraj Singh

“…To further improve the piezoresistive sensitivity, the gate-all-around (GAA) nanowire field-effect transistor (NWFET) was presented as a novel, miniaturized and lower voltage driven piezoresistive sensing element. …”
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Feasibility study of using 3D printed polymer sleeves for local deburring of test coupons using Drag finishing process by Muhammad Asyaari Juraimi

“…On the other hand, Drag Finishing requires the whole part to be inserted into the machine where all of the surfaces being exposed and burred. …”
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Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels by Tang, L. J., Ho, C. K. F., Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang, Chi, Dong Zhi, Chin, Yoke King, Lee, Pooi See

“…We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. …”
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Land reclamation - from conventional vertical drain methods to a combined vacuum preloading and electro-osmosis with horizontal drainage enhanced geotextile sheets by Wong, Lung Anthony

“…Consolidation analysis of drained reclamation work is a key aspect in assessing the performance of the ground improvement work conducted. …”
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Injection effects on settling velocity by Le, Duc Anh

“…Settling is a process by which particulates that experience forces fall to the bottom of a liquid and form sediment at the vessel base. …”
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Wind tunnel design and fabrication for lift force investigation by Ong, Jun Wei

“…The object using is often a smaller model of the actual vehicle with all the dimensions scaled down appropriately to obtain the most accurate simulation results possible. …”
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Low frequency noise measurement in the MOS transistor by Thet, Kyaw Win.

“…The width of all the devices tested is 10um while different channel lengths of the range 0.12 – 0.5 um are measured experimentally.…”
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Turbulent Flow over a Flexible Wall Undergoing a Streamwise Traveling Wavy Motion by Shen, Lian, Zhang, Xiang, Yue, Dick K.P., Triantafyllou, Michael S.

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Multi-trap energy states in GaN HEMTs : characterization and modeling by Binit Syamal, Zhou, Xing, Chiah, Siau Ben

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Analysis of high power gallium nitride based high electron mobility transistors for next generation electronics applications by Vompolu, Ganesh Sampath

“…Simulation results of lattice temperature profiles have confirmed the existence of a hotspot at the gate edge of gate-drain region. The junction temperature was determined from the lattice temperature profiles. …”
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Synaptic plasticity in VLSI : a floating-gate approach by Gopalakrishnan, Roshan

“…The spike triplet affects the setting of drain voltage–we present a single pulse and a double pulse drain voltage method to obtain the desired dependence of weight on spike timing. …”
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Hydrogen-bond memory and water-skin supersolidity resolving the Mpemba paradox by Zhang, Xi, Huang, Yongli, Ma, Zengsheng, Zhou, Yichun, Zhou, Ji, Zheng, Weitao, Jiang, Qing, Sun, Changqing

“…Being sensitive to the source volume, skin radiation, and the drain temperature, the Mpemba effect proceeds only in the strictly non-adiabatic ‘source–path–drain’ cycling system for the heat “emission–conduction–dissipation” dynamics with a relaxation time that drops exponentially with the rise of the initial temperature of the liquid source.…”
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