Phononic and structural response to strain in wurtzite-gallium nitride nanowires by Loh, G. C., Teo, Edwin Hang Tong, Tay, Beng Kang

“…Gallium nitride (GaN) nanowires exist in a myriad of cross-sectional shapes. …”
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Design and growth of high-power gallium nitride light-emitting diodes by Zhang, Zihui

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Innovative application and driving of enhancement mode gallium nitride power transistors by Cai, Aaron Qingwei

“…Wide-bandgap semiconductors like Gallium Nitride (GaN) are enabling higher efficiency and greater power density in power electronics. …”
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Growth of gallium nitride nanowires by low pressure chemical vapor deposition (LPCVD) by Wang, Jianbo

“…Group-III nitrides such as gallium nitride (GaN) have been intensively used for high power electronic, optoelectronic, RF power and sensor applications such as blue light emitting diodes (LEDs), high power and high voltage transistors, etc. …”
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Optimization of inkjet printing for copper indium gallium selenide solar absorber thin film / by Yang, Ruisheng, 1994-, author 620833, Kashif Tufail Chaudhary supervisor 620691, Muhammad Safwan Abd. Aziz, 1988- supervisor 546754, Fakulti Sains 8004

Optimization of inkjet printing for copper indium gallium selenide solar absorber thin film / by Yang, Ruisheng, 1994-, author 620833

Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) by Ong, Eugene Wei Han

“…GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. …”
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Development of compact power electronics inverter using gallium nitride (GaN) devices by Sinurat, Hendry Donald Hanesty

“…Introduction of Silicon Carbide (SiC) and Gallium Nitride (GaN) has created another platform for power converter to develop and answer the needs of today’s electronics. …”
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Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure by Duan, Tian Li, Pan, Ji Sheng, Ang, Diing Shenp

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Analysis of high power gallium nitride based high electron mobility transistors for next generation electronics applications by Vompolu, Ganesh Sampath

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A stretchable and self‐healing energy storage device based on mechanically and electrically restorative liquid‐metal particles and carboxylated polyurethane composites by Park, Sangbaek, Thangavel, Gurunathan, Parida, Kaushik, Li, Shaohui, Lee, Pooi See

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Growth instability of N-polar GaN on vicinal SiC substrate using plasma-assisted molecular beam epitaxy by Huo, Lili, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K.

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3.3–4.3 GHz efficient continuous class-F gallium nitride power amplifier based on simplified real frequency technique and harmonic tuning by Sadeque, Golam, Yusoff, Zubaida, Roslee, Mardeni, Hashim, Shaiful Jahari, Mohd Marzuki, Azah Syafiah, Lees, Jonathan, Zubir, Farid, Al-Bawri, Samir Salem

“…The load-pull and source-pull is applied at multiple points for 100 MHz intervals over the bandwidth to obtain the optimum impedances at the output and input of the 10W Gallium Nitride (GaN) Cree CGH40010F device. To verify the design, the RFPA is simulated, and the performance is measured between 3.3 and 4.3 GHz. …”
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Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices by Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong

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Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures by Wang, Liancheng, Liu, Wei, Zhang, Yiyun, Zhang, Zi-Hui, Yi, Xiaoyan, Wang, Guohong, Sun, Xiaowei, Zhu, Hongwei, Tan, Swee Tiam, Hilmi Volkan Demir

Subjects: “…Graphene; Light emitting diodes; Transparent conductive electrodes; Gallium nitride; Chemical vapor deposition…”
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Mechanism behind the controlled generation of liquid metal nanoparticles by mechanical agitation by Nor-Azman, Nur-Adania, Ghasemian, Mohammad B., Fuchs, Richard, Liu, Li, Widjajana, Moonika S., Yu, Ruohan, Chiu, Shih-Hao, A. Idrus-Saidi, Shuhada, Nieves Flores, Nieves Flores, Chi, Yuan, Tang, Jianbo, Kalantar-Zadeh, Kourosh

“…We show that even for 0.22 at. % of bismuth in gallium, the surface tension is significantly decreased from 558 to 417 mN/m (measured in Milli-Q water), resulting in an enhanced particle generation rate: 3.6 times increase in turbidity and ∼43% reduction in the size of particles for bismuth in gallium liquid alloy compared to liquid gallium for the same sonication duration. …”

Fabrication and application of novel highly ordered nano-heterostructure arrays in optoelectronics by Yadian, Boluo

“…The gentle bombardment of low energy gallium ions removes the defects from ZnO nanorod surfaces. …”
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Tin oxide based dye sensitized solar cells by Teh, Jun Jie

“…Despite high Voc and FF were achieved through gallium doping, short circuit current (Jsc) remained relatively low compared to TiO2 based DSSC. …”
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Morphology of three polycentric rumen fungi and description of a procedure for the induction of zoosporogenesis and release of zoospores in cultures by Ho, Y. W., Bauchop, T.

“…Undifferentiated sporangia were produced by all three isolates; differentiation of the sporangia did not occur in the spent growth media. However, if thalli possessing recently-formed sporangia were transferred to, or flooded with, fresh liquid medium or rumen fluid, zoosporogenesis and liberation of zoospores occurred within 17-20 min for isolates LL and LC2 and 30 min for R. elegans. …”
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Transparent conductive thin film by Sri Jeeva Santhira Seakaran

“…These thin films are Gallium-doped Zinc Oxide and Aluminium-doped Zinc Oxide. …”
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