Performance of horizontal drains in residual soil slopes by Rahardjo, Harianto, Santoso, Vera Amalia, Leong, Eng Choon, Ng, Yew Song, Hua, Chai Juay

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Evolution of artificial beach profiles with and without coastal drain system by Liu, Bao Long.

“…This study is a preliminary experimental investigation on the evolution of a beach profile with and without a coastal drain system under the action of waves. The main objectives are to investigate the equilibrium profile of an initially steep artificial beach, and to investigate the effect of the coastal drain pipe system on the evolution of the drained beach. …”
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Distribution and cycling of terrigenous dissolved organic carbon in peatland-draining rivers and coastal waters of Sarawak, Borneo by Martin, Patrick, Cherukuru, Nagur, Tan, Ashleen S. Y., Sanwlani, Nivedita, Mujahid, Aazani, Müller, Moritz

“…We present the first ever seasonally resolved measurements of DOC concentration and chromophoric dissolved organic matter (CDOM) spectra for six peatland-draining rivers and coastal waters in Sarawak, north-western Borneo. …”
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Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices by Qian, Haisheng, Hu, Guangxi, Hu, Laigui, Zhou, Xing, Liu, Ran, Zheng, Lirong

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Search for Heavy Narrow Dilepton Resonances in Pp Collisions at √s = 7 TeV and √s = 8 TeV by Apyan, Aram, Bendavid, Joshua L., Busza, Wit, Butz, Erik M., Cali, Ivan Amos, Chan, M., Gomez-Ceballos, Guillelmo, Goncharov, Maxim, Kim, Y., Klute, Markus, Krajczar, Krisztian F., Ma, Teng, Nahn, Steven, Paus, Christoph M. E., Ralph, Duncan Kelley, Rudolph, Matthew Scott, Stephans, George S. F., Sung, Kevin Kai Hong, Velicanu, Dragos Alexandru, Wenger, Edward Allen, Wyslouch, Boleslaw, Yilmaz, Yetkin, Yoon, A. S., Zanetti, Marco, Bauer, Gerry P, Dutta, Valentina, Levin, Andrew Michael, Roland, Christof E, Stoeckli, Fabian, Luckey Jr, P David, Roland, Gunther M, Sumorok, Konstanty C, Wolf, Roger, Yang, Mingming, Wyslouch, Victoria

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Gate-all-around nanowire FET sensors with ultrahigh sensitivity and low noise by Pushpapraj Singh

“…To further improve the piezoresistive sensitivity, the gate-all-around (GAA) nanowire field-effect transistor (NWFET) was presented as a novel, miniaturized and lower voltage driven piezoresistive sensing element. …”
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Nickel-silicided Schottky junction CMOS transistors with gate-all-around nanowire channels by Tang, L. J., Ho, C. K. F., Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Lo, Guo-Qiang, Chi, Dong Zhi, Chin, Yoke King, Lee, Pooi See

“…We demonstrate high-performance Schottky CMOS transistors with NiSi source/drain and gate-all-around (GAA) silicon nanowire (~5 nm) channels. …”
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Conceptual paper on action research in a chinese lithium electric materials company: brain drain, talent-position mismatch and talent outflow. by Fu, Jianghua, Choo, Ling Suan, Teo, Poh-Chuin, Tan, Jun-Wei, C. F. Ho, Theresa

Land reclamation - from conventional vertical drain methods to a combined vacuum preloading and electro-osmosis with horizontal drainage enhanced geotextile sheets by Wong, Lung Anthony

“…Consolidation analysis of drained reclamation work is a key aspect in assessing the performance of the ground improvement work conducted. …”
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Search for the X (5568) State Decaying into B[superscript 0][subscript s] π[superscript ±] in Proton-Proton Collisions at √ s = 8 TeV by Sirunyan, A. M., CMS Collaboration

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Low frequency noise measurement in the MOS transistor by Thet, Kyaw Win.

“…The width of all the devices tested is 10um while different channel lengths of the range 0.12 – 0.5 um are measured experimentally.…”
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Computational fluid dynamics simulation of jet in crossflow by Ahmad Anwar

“…An error value of 0.459% was achieved for the LES simulation case with velocity ratio of 15, compared to 32.5% for the corresponding k-epsilon case. However, the realizable k-epsilon turbulence model was chosen for the subsequent simulations of jet from the drain mast in crossflow, due to the less computational costs involved. …”
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Multi-trap energy states in GaN HEMTs : characterization and modeling by Binit Syamal, Zhou, Xing, Chiah, Siau Ben

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Analysis of high power gallium nitride based high electron mobility transistors for next generation electronics applications by Vompolu, Ganesh Sampath

“…Simulation results of lattice temperature profiles have confirmed the existence of a hotspot at the gate edge of gate-drain region. The junction temperature was determined from the lattice temperature profiles. …”
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Synaptic plasticity in VLSI : a floating-gate approach by Gopalakrishnan, Roshan

“…We also show measurement results from a FG synapse fabricated in TSMC 0.35 um CMOS process in comparison with the biological experimental observations for (1) original doublet protocol, (2) two protocols of spike triplets, (3) frequency effects of pairing protocol, (4) quadruplet experiments and (5) replication of BCM rule. Possible VLSI implementation of drain voltage waveform generator circuits are also presented with simulation results. …”
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3.3–4.3 GHz efficient continuous class-F gallium nitride power amplifier based on simplified real frequency technique and harmonic tuning by Sadeque, Golam, Yusoff, Zubaida, Roslee, Mardeni, Hashim, Shaiful Jahari, Mohd Marzuki, Azah Syafiah, Lees, Jonathan, Zubir, Farid, Al-Bawri, Samir Salem

“…According to experimental findings, the measured drain efficiency (DE) throughout the whole bandwidth ranged from 57.5 to 67.5% at the output power of 40 dBm. …”
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Hydrogen-bond memory and water-skin supersolidity resolving the Mpemba paradox by Zhang, Xi, Huang, Yongli, Ma, Zengsheng, Zhou, Yichun, Zhou, Ji, Zheng, Weitao, Jiang, Qing, Sun, Changqing

“…Being sensitive to the source volume, skin radiation, and the drain temperature, the Mpemba effect proceeds only in the strictly non-adiabatic ‘source–path–drain’ cycling system for the heat “emission–conduction–dissipation” dynamics with a relaxation time that drops exponentially with the rise of the initial temperature of the liquid source.…”
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Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs by Chin, Yoke King

“…Silicon nanowire with Gate-All-Around architecture is considered as one of the most promising candidates for CMOS scaling beyond 11 nm technology node due to its superior gate to channel electrostatic control. …”
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Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111) by Anand, M. J., Ng, G. I., Arulkumaran, S., Manoj Kumar, C. M., Ranjan, K., Vicknesh, S., Foo, S. C., Syamal, B., Zhou, X.

“…Under high-EF (Lgd = 2 μm), the devices exhibited higher dyn-R DS[ON] degradation but a small ΔVth (∼120 mV). However, at low-EF (Lgd = 5 μm), smaller dyn-R DS[ON] degradation but a larger ΔVth (∼380 mV) was observed. …”
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Visitation returns and nineteenth-century Anglicanism in Oxford and its surrounding parishes by Lancaster, S

“…Despite being a significant drain on time and resources much church building took place over the century. …”