Spontaneous Parametric Down-Conversion from GaAs Nanowires at Telecom Wavelength by Saerens Grégoire, Duong Ngoc My Hanh, Solntsev Alexander S., Karvounis Artemios, Dursap Thomas, Regreny Philippe, Morandi Andrea, Chapman Robert J., Maeder Andreas, Danescu Alexandre, Penuelas José, Chauvin Nicolas, Grange Rachel

“…We report on the generation of photon pairs at 1550 nm from free-standing epitaxially grown self-assisted micrometre long GaAs nanowires. The efficiency of the spontaneous parametric down-conversion process has a rate of 320 GHz/Wm normalized to the transmission of the setup, the pump intensity, and the volume of the nanostructure. …”
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GaAs TECHNOLOGY by Mustafa TEMİZ

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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration by Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii

“…It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 10⁶ cm⁻², the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. …”
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Exciton-mediated photothermal cooling in GaAs membranes by André Xuereb, Koji Usami, Andreas Naesby, Eugene S Polzik, Klemens Hammerer

“…Cooling of the mechanical motion of a GaAs nano-membrane using the photothermal effect mediated by excitons was recently demonstrated by some of the authors (Usami et al 2012 Nature Phys. 8 168) and provides a clear example of the use of thermal forces to cool down mechanical motion. …”
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Broadband optical ultrafast reflectivity of Si, Ge and GaAs by A. Di Cicco, G. Polzoni, R. Gunnella, A. Trapananti, M. Minicucci, S. J. Rezvani, D. Catone, L. Di Mario, J. S. Pelli Cresi, S. Turchini, F. Martelli

“…The obtained fluence damage thresholds are 30, 20.8, 9.6 mJ/ $$\hbox {cm}^2$$ cm 2 for Si, Ge and GaAs respectively. Ultrafast reflectivity patterns show clear differences in the Si, Ge, and GaAs trends both for the wavelength and time dependences. …”
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Quantum Interference Controls the Electron Spin Dynamics in n-GaAs by V. V. Belykh, A. Yu. Kuntsevich, M. M. Glazov, K. V. Kavokin, D. R. Yakovlev, M. Bayer

“…In particular, we find that weak localization controls the free electron spin relaxation in semiconductors at low temperatures and weak magnetic fields by slowing it down by almost a factor of two in n-doped GaAs in the metallic phase. …”
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Mott transition of excitons in GaAs-GaAlAs quantum wells by G Manzke, D Semkat, H Stolz

“…We investigate the breakup of bound electron–hole pairs, known as Mott transition of excitons, in GaAs-GaAlAs quantum wells with increasing excitation, comparing two different theoretical approaches. …”
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Non-equilibrium critical point in Be-doped low-temperature-grown GaAs by Mohamed, Mohd Ambri, Pham, Tien Lam, N., Otsuka

“…We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. …”
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High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments by Ming Li, Gong Chen, Ru Huang

“…Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. …”
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Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure by Xudong Liu, Hao Chen, Shixiong Liang, Meng Zhang, Zhendong Jiang, Shuting Fan, Yiwen Sun

“…We demonstrate an ultrabroadband electrically controllable terahertz modulator based on a Schottky diode structure formed with periodic metal microslits on an n-doped GaAs substrate. The mechanism of our design is different from that of the traditional Schottky diode-based THz electrical modulator, which uses free charge carriers in a substrate to control the resonant behavior of metamaterials. …”
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Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A by Artur Tuktamyshev, Alexey Fedorov, Sergio Bietti, Shiro Tsukamoto, Roberto Bergamaschini, Francesco Montalenti, Stefano Sanguinetti

“…We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. …”
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DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications by Bhoop Singh, Prasad B, Dinesh Kumar

“…The device dimensions have been consistently scaling down since many developing technologies need smaller and faster integrated circuits for advancement and improvement in both performance and device density. …”
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On the energy resolution of a GaAs-based electron source for spin-resolved inverse photoemission by Campos Abraham Federico, Duden Thomas, Tejeda Antonio

“…First, we find that cooling down the GaAs photocathode to 77 K increases the band gap and reduces the number of allowed vertical transitions, monochromatizing the electron beam with an enhancement of about 30 meV for the energy resolution. …”
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All-optical switches based on GaAs/AlGaAs quantum dots vertical cavity by Ismail, Fairuz Diyana, Jomtarak, R., Teeka, C., Ali, Jalil, Yupapin, P. P.

“…In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. …”

Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review by Yao-Jen Lee, Guang-Li Luo, Fu-Ju Hou, Min-Cheng Chen, Chih-Chao Yang, Chang-Hong Shen, Wen-Fa Wu, Jia-Min Shieh, Wen-Kuan Yeh

“…In the first part, the novel Ge gate-all-around field effect transistors (GAA FETs) are introduced and discussed. Fabrication of Ge GAA FETs requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. …”
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A 66–76 GHz Wide Dynamic Range GaAs Transceiver for Channel Emulator Application by Peigen Zhou, Chen Wang, Jin Sun, Zhe Chen, Jixin Chen, Wei Hong

“…In this study, we developed a single-channel channel emulator module with an operating frequency covering 66–67 GHz, including a 66–76 GHz wide dynamic range monolithic integrated circuit designed based on 0.1 µm pHEMT GaAs process, a printed circuit board (PCB) power supply bias network, and low-loss ridge microstrip line to WR12 (60–90 GHz) waveguide transition structure. …”
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Machine-learning-assisted and real-time-feedback-controlled growth of InAs/GaAs quantum dots by Chao Shen, Wenkang Zhan, Kaiyao Xin, Manyang Li, Zhenyu Sun, Hui Cong, Chi Xu, Jian Tang, Zhaofeng Wu, Bo Xu, Zhongming Wei, Chunlai Xue, Chao Zhao, Zhanguo Wang

“…Abstract The applications of self-assembled InAs/GaAs quantum dots (QDs) for lasers and single photon sources strongly rely on their density and quality. …”
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InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods by Alexey E. Zhukov, Natalia V. Kryzhanovskaya, Eduard I. Moiseev, Anna S. Dragunova, Mingchu Tang, Siming Chen, Huiyun Liu, Marina M. Kulagina, Svetlana A. Kadinskaya, Fedor I. Zubov, Alexey M. Mozharov, Mikhail V. Maximov

“…Microlasers have a joint electrical contact over a residual <i>n</i>+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a <i>p</i>-contact to separate contact pads. …”
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The Action of Recombinant Human Lysosomal α-Glucosidase (rhGAA) on Human Liver Glycogen: Pathway to Complete Degradation by Allen K. Murray

“…As a branched chain carbohydrate, it is broken down by phosphorylase and debrancher enzymes, which are cytoplasmic. …”
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Effect of bismuth content on the structural and electronic properties of GaAs1-yBiy: first principles calculations by O.V. Devitsky

“…The results of the study showed that the fundamental band gap GaAs1-yBiy increase in the concentration of bismuth leads to an increase in the GaAs1-yBiy lattice constant, which causes internal asymmetry and a decrease in the Ga-Bi bond length. …”
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