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81
Design of optimal nanoscale channel dimensions of FinFET based on constituent semiconductor materials
Published 2019“…The aim of this study is to design optimal Nano-dimensional channel of FinFET based on electrical characteristics and semiconductor material (Si GaAs Ge and InAs) to overcome dimensions shrunk down issues and ensure the best performance of FinFETs. …”
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Thesis -
82
Growth and characterization of III-V semiconductor solar cells.
Published 2010“…AuGe:Ni alloy was used as the electrodes on the GaAs devices due to its ability to form ohmic contact on GaAs surface. …”
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Final Year Project (FYP) -
83
Hydrostatic pressure studies of semiconductor heterostructures and Schottky diodes /
Published 1995“…Investigations of the role of various transport channels have been carried out for single GaAs/AIAs and double barrier AIAs/GaAs/AIAs structures. …”
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84
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate
Published 2022-04-01“…Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. …”
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Article -
85
A Compact Broadband Monolithic Sub-Harmonic Mixer Using Multi-Line Coupler
Published 2020-04-01“…A compact broadband monolithic sub-harmonic mixer is presented in a 70 nm GaAs Technology for millimeter wave wireless communication application. …”
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Article -
86
Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
Published 2022-09-01“…The long-wavelength photosensitivity of the GaAsSbN and GaAsSb layers, determined from their SPV spectra, is extended down to 1.2 eV. Although GaAsSb has a slightly larger lattice mismatch with the GaAs substrate compared to GaAsSbN, it presents a higher photoresponse, since, in GaAsSbN, the incorporation of N induces additional recombination centres. …”
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Article -
87
Quantum effects in artificial atoms
Published 2003“…The first part presents a numerical study of spin effects in GaAs/AlAs modulation-doped quantum dots containing 0 to 50 electrons. …”
Thesis -
88
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An overview of new design techniques for high performance CMOS millimeter-wave circuits
Published 2015“…CMOS millimeter-wave integrated circuits are more attractive due to its potential in higher integration with digitalsignal processing blocks and lower cost, compared to SiGe and GaAs. Meanwhile, the cut-off (ft) frequency of MOSFETs is continuously increased along with the scaling down of transistors as predicted with Moore's law. …”
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Conference Paper -
90
GaInP nanowire arrays for color conversion applications
Published 2020-12-01“…GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga0.51In0.49P/GaAs stacks with pre-determined layer thicknesses. …”
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Article -
91
Experimental Characterization of High Tolerance to Beam Irradiation Conditions of Light Beam Power Receiving Module for Optical Wireless Power Transmission Equipped with a Fly-Eye...
Published 2022-10-01“…In addition, a fly-eye lens system with mirrors applied to four surfaces was proposed and fabricated as a light-receiving side module that can receive high incident angles from any direction of up, down, left, and right and its effectiveness was clarified through experiments.…”
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Article -
92
Suppression of Zeeman Splitting of the Energy Levels of Exciton-Polariton Condensates in Semiconductor Microcavities in an External Magnetic Field
Published 2017“…By studying magnetophotoluminescence spectra from a GaAs microcavity, we show experimentally that a similar effect occurs in a nonequilibrium polariton condensate arising from polariton parametric scattering. …”
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Journal Article -
93
Generic technique to grow III-V semiconductor nanowires in a closed glass vessel
Published 2016-06-01“…The growth of nanowires is achieved after heating the closed vessel in a furnace to a preset high temperature and then cooling it down naturally to room temperature. The technique has been employed to grow InAs, GaAs, and GaSb nanowires on Si/SiO2 substrates. …”
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Article -
94
Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets
Published 2023-01-01“…The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step under As flux. …”
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Article -
95
From Two- to Three-Dimensional Model of Heat Flow in Edge-Emitting Laser: Theory, Experiment and Numerical Tools
Published 2021-10-01“…As an example subject of research, we chose self-made <i>p</i>-side-down mounted InGaAs/GaAs/AlGaAs laser. Purpose-designed axial heat source function was introduced to take into account various mirror heating mechanisms, namely, surface recombination, reabsorption of radiation, Joule, and bulk heating. …”
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Article -
96
Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN
Published 2022“…The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al2O3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. …”
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97
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98
Toward ultra-broadband photoacoustic spectroscopy of supercooled liquids
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Thesis -
99
Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy
Published 2024-02-01“…This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200–250 °C. …”
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Article -
100