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    Low temperature grown GaNAsSb : a promising material for photoconductive switch application by Li, D. S., Saadsaoud, N., Tripon-Canseliet, C., Lampin, J. F., Decoster, D., Chazelas, J., Yoon, Soon Fatt, Wicaksono, Satrio, Loke, Wan Khai, Tan, Kian Hua

    Published 2013
    “…We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. …”
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    Journal Article
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