A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement by Jyi-Tsong Lin, Shao-Cheng Weng

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Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer by Hyun Woo Kim, Daewoong Kwon

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Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor by Zahra Ahangari

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Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET) by Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim, Sangwan Kim

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Improvement of power swing blocking scheme in distance protection relay by Ya'u, Mohammed Sani

“…Due to the characteristics of distance relay that can trip during power swings, a Power Swing Blocking (PSB) unit is developed to prevent unwanted distance relay operation during power swings. …”
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Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs by Sajjad, Redwan Noor, Chern, Winston, Hoyt, Judy L, Antoniadis, Dimitri A

“…We find that the combination of the intrinsic sharpness of the band edges (Urbach tail) and the surface trap density determines the subthreshold swing.…”
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Voltage Improvement of a Swing-Magnet-Type Generator for Harvesting Bicycle Vibrations by Mitsuhide Sato, Takuto Takemura, Tsutomu Mizuno

“…This paper proposes a swing-magnet-type generator that utilizes environment vibration for energy harvesting applications. …”
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Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain by Jang Hyun Kim, Hyun Woo Kim, Garam Kim, Sangwan Kim, Byung-Gook Park

Subjects: “…band-to-band tunneling…”
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Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications by Gunhoo Woo, Taesung Kim, Hocheon Yoo

“…Abstract Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). …”
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ZrO x Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior by Siqing Zhang, Huan Liu, Jiuren Zhou, Yan Liu, Genquan Han, Yue Hao

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Genetic Diversity Analysis of Guangxi Kumquat (<i>Fortunella</i> Swing) Germplasm Using SRAP Markers by Binghao Liu, Ping Ding, Rongchun Ye, Yi Li, Shanhan Ou, Alessandra Gentile, Xianfeng Ma, Ziniu Deng

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Foot clearance using ultra wide band by Tan, Demi Jia Min

“…While foot clearance is defined as the height of the foot during the swing phase. Therefore, in this project, the use of ultra wide band to measure the foot clearance will be investigated. …”
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Ultrasonic localization system with narrow band sensors by Pang, Shang Hao

“…Mobile nodes are attached to a swinging pendulum to find the best-case accuracy at various moving velocities. …”
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Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures by Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li

“…We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation <inline-formula> <tex-math notation="LaTeX">${T}\,\,=$ </tex-math></inline-formula> 300 K &#x2013; 4.5 K. Subthreshold swing (SS)-plateau at 125 K &#x2013; 50 K in combination with SS-linearity at <inline-formula> <tex-math notation="LaTeX">${T}\,\,=$ </tex-math></inline-formula> 300 K &#x2013; 125 K and 50 K &#x2013; 4.5 K were observed in different types of FD-SOI p-MOSFETs with channel length <inline-formula> <tex-math notation="LaTeX">$(L_{G}) \leq100$ </tex-math></inline-formula> nm, which is possibly attributed to temperature-dependent dopant ionization induced band-to-band and trap-assisted tunneling across the drain-body junction. …”
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Broadband power amplifier design at mm wave band by Luan, Zixuan

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Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2 by Yue Peng, Yan Liu, Genquan Han, Jincheng Zhang, Yue Hao

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Human upper extremity motor cortex activity shows distinct oscillatory signatures for stereotyped arm and leg movements by Clara Kwon Starkweather, Melanie A. Morrison, Maria Yaroshinsky, Kenneth Louie, Jannine Balakid, Kara Presbrey, Philip A. Starr, Doris D. Wang

“…Furthermore, we show that this oscillatory activity is separable, both in frequency and spatial domains, from gamma band activity changes that occur during arm swing.DiscussionOur study contributes to the growing body of evidence that lower extremity movement may be more broadly represented in the motor cortex, and suggest that it may represent a way to coordinate stereotyped movements across the upper and lower extremities.…”
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Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance by Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li

“…SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source)/Si(channel) can result in a smaller tunneling distance, which is very helpful in boosting the tunneling rate. …”
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Polarization Gradient Effect of Negative Capacitance LTFET by Hao Zhang, Shupeng Chen, Hongxia Liu, Shulong Wang, Dong Wang, Xiaoyang Fan, Chen Chong, Chenyu Yin, Tianzhi Gao

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Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation by Kitae Lee, Sihyun Kim, Daewoong Kwon, Byung-Gook Park

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