Low-Power OR Logic Ferroelectric In-Situ Transistor Based on a CuInP₂S₆/MoS₂ Van Der Waals Heterojunction by Kun Yang, Shulong Wang, Tao Han, Hongxia Liu

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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance by Shupeng Chen, Shulong Wang, Hongxia Liu, Tao Han, Haiwu Xie, Chen Chong

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Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor by Shupeng Chen, Hongxia Liu, Shulong Wang, Wei Li, Xing Wang, Lu Zhao

“…The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. …”
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Superlattice-source nanowire FET with steep Subthreshold characteristics by Zhao, Xin, Ph. D. Massachusetts Institute of Technology

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Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET by Chen Chong, Hongxia Liu, Shulong Wang, Xiaocong Wu

“…The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. …”
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Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET by Chen Chong, Hongxia Liu, Shougang Du, Shulong Wang, Hao Zhang

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High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing by Huan Liu, Genquan Han, Yan Liu, Yue Hao

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Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and Hig... by Khalil Tamersit, Abdellah Kouzou, Hocine Bourouba, Ralph Kennel, Mohamed Abdelrahem

“…The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. …”
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Development of Brain Computer Interface (BCI) system for integration with Functional Electrical Stimulation (FES) application by Ahad, Rosnee

“…The output of this study shows that values of standard deviation, standard error, minimum, end value – start value and RMS of the beta band for EEG signal is high for swing motion and low for static. …”
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High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation by Huan Liu, Genquan Han, Yan Liu, Xiaosheng Tang, Jingchen Yang, Yue Hao

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Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors by Chen Chong, Hongxia Liu, Shulong Wang, Shupeng Chen, Haiwu Xie

“…Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. …”
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Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation by Yang Xu, Genquan Han, Huan Liu, Yibo Wang, Yan Liu, Jinping Ao, Yue Hao

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A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor. by Xi Liu, Mengmeng Li, Meile Wu, Shouqiang Zhang, Xiaoshi Jin

“…Thereafter, the efficient area of the band-to-band tunneling generation region near the source drain contacts is significantly increased, so as to achieve sensitive ON-state current driving ability. …”
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Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures by Qiyu Yang, Zheng-Dong Luo, Huali Duan, Xuetao Gan, Dawei Zhang, Yuewen Li, Dongxin Tan, Jan Seidel, Wenchao Chen, Yan Liu, Yue Hao, Genquan Han

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Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide by Vandana Singh Rajawat, Ajay Kumar, Bharat Choudhary

“…The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence band energy, and subthreshold swing is reported. …”
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Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor by Hamzah, Muhammad Afiq Nurudin

“…The energy band gap exhibits an inverse relation to the overlapping region and metallic properties was restored when the overlap has reached certain limit. …”
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Performance metrics of pristine graphene nanoribbons field-effect transistor with different types of contacts by Wong, Kien Liong, Chuan, Mu Wen, Hamzah, Afiq, Alias, Nurul Ezaila, Lim, Cheng Siong, Tan, Michael Loong Peng

“…After that, the performance metrics of the simulated device, for instance, drain-induced barrier lowering (DIBL), subthreshold swing, current ratio, and threshold voltage, are computed. …”

An 11.8-fJ/Conversion-Step Noise Shaping SAR ADC with Embedded Passive Gain for Energy-Efficient IoT Sensors by Changhyung Choi, Jong-Wook Lee

“…The noise shaping moves the in-band quantization noise from the signal band to out-of-band for improved signal-to-noise ratio (SNR). …”
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A 1-V 7th-Order SC Low-Pass Filter for 77-GHz Automotive Radar in 28-nm FD-SOI CMOS by Alessandro Parisi, Giuseppe Papotto, Egidio Ragonese, Giuseppe Palmisano

“…It is operated at a power supply as low as 1 V and guarantees 5-dB in-band voltage gain while providing out-of-band attenuation higher than 36 dB and a programmable passband up to 30 MHz. …”
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Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors by Do-Kyung Kim, Jihwan Park, Xue Zhang, Jaehoon Park, Jin-Hyuk Bae

“…We confirm accuracy by exploiting physical factors, such as oxygen vacancy, peroxide, hydrogen complex, band-to-band tunneling, and trap-assisted tunneling. …”
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