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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Published 2020-10-01Get full text
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43
Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor
Published 2018-10-01“…The average subthreshold swing of TGTFET (SSavg, from 0 to 0.5 V V g) reaches 51.5 mV/dec, and the minimum subthreshold swing of TGTFET (SSmin, at 0.1 V V g) reaches 24.4 mV/dec. …”
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Superlattice-source nanowire FET with steep Subthreshold characteristics
Published 2013Get full text
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45
Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET
Published 2021-10-01“…The total ionizing dose (TID) effect on SOI-TFET was studied by discussing the switching ratio, band–band tunneling rate, threshold voltage, sub-threshold swing and bipolar effect of the device under different doses of irradiation. …”
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Study on the Simulation of Biosensors Based on Stacked Source Trench Gate TFET
Published 2023-01-01Get full text
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47
High Mobility Ge pMOSFETs with ZrO2 Dielectric: Impacts of Post Annealing
Published 2019-06-01Get full text
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48
Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and Hig...
Published 2022-01-01“…The proposed high-performance JL CNTTFET is endowed with a particular doping approach in the aim of shrinking the band-to-band tunneling (BTBT) window and dilating the direct source-to-drain tunneling window, while keeping the junctionless paradigm. …”
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Development of Brain Computer Interface (BCI) system for integration with Functional Electrical Stimulation (FES) application
Published 2015“…The output of this study shows that values of standard deviation, standard error, minimum, end value – start value and RMS of the beta band for EEG signal is high for swing motion and low for static. …”
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High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
Published 2019-01-01Get full text
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Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors
Published 2021-05-01“…Tunneling field-effect transistors (TFETS) can reduce the subthreshold swing (SS) to below 60 mV/decade due to their conduction mechanism with band-to-band tunneling (BTBT), thereby reducing power consumption. …”
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Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation
Published 2019-04-01Get full text
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A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor.
Published 2023-01-01“…Thereafter, the efficient area of the band-to-band tunneling generation region near the source drain contacts is significantly increased, so as to achieve sensitive ON-state current driving ability. …”
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Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
Published 2024-02-01Get full text
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Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide
Published 2023-10-01“…The effect of using SOI substrate and a high-k dielectric layer on ON current, OFF current, electric field, electron mobility, conduction & valence band energy, and subthreshold swing is reported. …”
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Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
Published 2014“…The energy band gap exhibits an inverse relation to the overlapping region and metallic properties was restored when the overlap has reached certain limit. …”
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Performance metrics of pristine graphene nanoribbons field-effect transistor with different types of contacts
Published 2020“…After that, the performance metrics of the simulated device, for instance, drain-induced barrier lowering (DIBL), subthreshold swing, current ratio, and threshold voltage, are computed. …”
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An 11.8-fJ/Conversion-Step Noise Shaping SAR ADC with Embedded Passive Gain for Energy-Efficient IoT Sensors
Published 2022-01-01“…The noise shaping moves the in-band quantization noise from the signal band to out-of-band for improved signal-to-noise ratio (SNR). …”
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A 1-V 7th-Order SC Low-Pass Filter for 77-GHz Automotive Radar in 28-nm FD-SOI CMOS
Published 2021-06-01“…It is operated at a power supply as low as 1 V and guarantees 5-dB in-band voltage gain while providing out-of-band attenuation higher than 36 dB and a programmable passband up to 30 MHz. …”
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Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors
Published 2020-10-01“…We confirm accuracy by exploiting physical factors, such as oxygen vacancy, peroxide, hydrogen complex, band-to-band tunneling, and trap-assisted tunneling. …”
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