High-Linearity Direct Conversion Receiver with the Transconductance Equalization Technique and DCOC Method by Yiming Han, Fengjie Wang, Jiarui Liu, Zhiyu Wang, Faxin Yu

“…For one thing, the proposed transconductance equalization technique employs a pair of resistors to guarantee high voltage gain for an OPAMP with two-stage Miller topology under a high-input voltage swing to improve linearity with little deterioration of the noise performance. …”
Get full text

Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO₂ Thin-Film Transistor by Won-Yong Lee, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang

“…The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. …”
Get full text

Ultra-scaled III-V Vertical Tunneling Transistors by Shao, Yanjie

“…We focus on the most promising group III-V semiconductor heterojunction structure, the broken-band GaSb/InAsSb system, in a vertical nanowire (VNW) TFET configuration. …”
Get full text

Tunneling and ferroelectric based transistors for energy efficient electronics by Zubair, Ahmad,Ph.D.Massachusetts Institute of Technology.

Get full text

Effects of Transcranial Direct Current Stimulation over the Supplementary Motor Area Combined with Walking on the Intramuscular Coherence of the Tibialis Anterior in a Subacute Pos... by Naruhito Hasui, Naomichi Mizuta, Junji Taguchi, Tomoki Nakatani, Shu Morioka

“…Intramuscular coherence in both the stance and swing phases was reduced at follow-up. Walking speed showed no change, while STV was noticeably decreased in phase B compared with phase A. …”
Get full text

Ink-jet printed In-Ga-Zn oxide thin film transistors by Wang, Ye.

“…It is transparent in the visible region due to the large band gap. It has a high mobility, even for an amorphous structure due to s-electron conduction. …”
Get full text

A CMOS ultra low-power and highly efficient UWB-IR transmitter for WPAN applications by Diao, Shengxi, Zheng, Yuanjin, Heng, Chun-Huat

“…The transmitter can deliver a large differential output swing of 4.9 V under 100-Ω load with the highest power efficiency of 25.4% to date. …”
Get full text
Get full text

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3 by Useong Kim, Chulkwon Park, Taewoo Ha, Young Mo Kim, Namwook Kim, Chanjong Ju, Jisung Park, Jaejun Yu, Jae Hoon Kim, Kookrin Char

“…We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. …”
Get full text

DFT based estimation of CNT parameters and simulation-study of GAA CNTFET for nano scale applications by Bhoop Singh, Prasad B, Dinesh Kumar

“…Density of States (DoS) and Band gap (E _g ) are extracted by using MedeA tool’s VASP 5.3 module. …”
Get full text

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors by Qian Ma, He-Mei Zheng, Yan Shao, Bao Zhu, Wen-Jun Liu, Shi-Jin Ding, David Wei Zhang

“…As the deposition temperature increases from 150 to 200 °C, the optical band gap (Eg) of the deposited film rises from 3.42 to 3.75 eV. …”
Get full text

The Statistical Polarization Properties of Coherent Curvature Radiation by Bunches: Application to Fast Radio Burst Repeaters by Ze-Nan Liu, Wei-Yang Wang, Yuan-Pei Yang, Zi-Gao Dai

“…Besides, we find that most of the depolarization degrees of bursts have a small variation in a wide frequency band. Furthermore, we simulate the polarization angle (PA) evolution and find that most bursts show a flat PA evolution within the burst phases, and some bursts present a swing of the PA.…”
Get full text

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film by Honglong Ning, Xianzhe Liu, Hongke Zhang, Zhiqiang Fang, Wei Cai, Jianqiu Chen, Rihui Yao, Miao Xu, Lei Wang, Linfeng Lan, Junbiao Peng, Xiaofeng Wang, Zichen Zhang

“…The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. …”
Get full text

GaN Complementary-Metal-Oxide-Semiconductor (CMOS) Technology by Chowdhury, Nadim

“…Apart from being a direct and wide band-gap semiconductor which can be useful for optoelectronic devices, GaN and its alloys have other material attributes like spontaneous and piezoelectric polarization, high electron mobility, and high saturation velocity for electrons. …”
Get full text

Comparative Analysis of Audio Processing Techniques on Doppler Radar Signature of Human Walking Motion Using CNN Models by Minh-Khue Ha, Thien-Luan Phan, Duc Hoang Ha Nguyen, Nguyen Hoang Quan, Ngoc-Quan Ha-Phan, Congo Tak Shing Ching, Nguyen Van Hieu

“…A hardware prototype of the signal acquisition circuitry was designed for a Continuous Wave (CW) K-24 GHz frequency band radar sensor. The collected radar motion data was categorized into non-human motion, human walking, and human walking without arm swing. …”
Get full text

STRATEGI POLITIK DALAM PEMENANGAN PILKADA (Analisis Kemenangan Telly Tjanggulung Pada Pilkada di Minahasa Tenggara tahun 2008) by , FRANKY ROBERT DONOVAN RENGKUNG, SIP, , Dra. Ratnawati, SU

“…Consideration of "" last-minute swing voters ' and the ' band wagon effect ", become the factor of motivation of the candidates and his success-team to be pragmatic." …”

InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications by Yu, Tao, Ph. D. Massachusetts Institute of Technology

Get full text

Tomographic reconstruction of 3D sound speed fields to reveal internal tides on the continental slope of the South China Sea by Longhao Dai, Longhao Dai, Cong Xiao, Xiao-Hua Zhu, Xiao-Hua Zhu, Xiao-Hua Zhu, Ze-Nan Zhu, Chuanzheng Zhang, Hua Zheng, Hua Zheng, Minmo Chen, Qiang Li

“…Sensitivity experiments demonstrated that a swing of the anchor tether of< 5 m had less impact on sound speed inversion, while distance drifts caused by human activities of > 50 m had a significant influence. …”
Get full text

Combined Implications of UV/O₃ Interface Modulation with HfSiO_X Surface Passivation on AlGaN/AlN/GaN MOS-HEMT by Soumen Mazumder, Ssu-Hsien Li, Zhan-Gao Wu, Yeong-Her Wang

“…The threshold voltage (V_TH) of the MOS-HEMT was shifted towards positive due to the band bending at the SiO₂/GaN interface by UV/O₃ surface treatment. …”
Get full text

Microstructure and conductance-slope of InAs/GaSb tunnel diodes by Fitzgerald, Eugene A., Iutzi, Ryan (Ryan Michael)

“…The conductance slope can also be improved by annealing the samples at higher temperatures, which we believe acts to annihilate point defects and average out major fluctuations in band alignment across the interface. Using a combination of these techniques, we can greatly improve the steepness of the conductance slope which could result in steeper subthreshold swings in TFETs in the future.…”
Get full text
Get full text
Get full text

Investigation and design of low power circuit blocks for medical implant SOCs by Arjun, Ramaswami Palaniappan

“…The ADPLL operates at 0.68 V, covers the MedRadio frequency band, occupies a silicon area of 0.0186 mm2 and exhibits an rms jitter of 11.88 ps. …”
Get full text