Numerical Study of Growth Rate and Purge Time in the AlN Pulsed MOCVD Process 由 Wei-Jie Lin, Jyh-Chen Chen

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Numerical analysis of the use of multiple inlet plates to improve the thickness uniformity of silicon epitaxial layers during atmospheric pressure chemical vapor deposition 由 Ba-Phuoc Le, Jyh-Chen Chen, Chieh Hu, Wei-Jie Lin, Chun-Chin Tu, Liang-Chin Chen

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Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process 由 Ying-Yang Teng, Jyh-Chen Chen, Chung-Wei Lu, Cheng-Chuan Huang, Wan-Ting Wun, Hsueh-I Chen, Chi-Yung Chen, Wen-Chieh Lan

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Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors 由 Robert Tseng, Sung-Tsun Wang, Tanveer Ahmed, Yi-Yu Pan, Shih-Chieh Chen, Che-Chi Shih, Wu-Wei Tsai, Hai-Ching Chen, Chi-Chung Kei, Tsung-Te Chou, Wen-Ching Hung, Jyh-Chen Chen, Yi-Hou Kuo, Chun-Liang Lin, Wei-Yen Woon, Szuya Sandy Liao, Der-Hsien Lien

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