The effect of different ge concentration on the characteristics of strain silicon MOSFET /
PRZSL
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Skudai : Universiti Teknologi Malaysia,
2007
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| _version_ | 1796678852647321600 |
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| author | Razali Ismail, 1960-, author Wong, Yah Jin, 1983-, author Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru) |
| author_facet | Razali Ismail, 1960-, author Wong, Yah Jin, 1983-, author Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru) |
| author_sort | Razali Ismail, 1960-, author |
| collection | OCEAN |
| description | PRZSL |
| first_indexed | 2024-03-04T20:50:26Z |
| format | |
| id | KOHA-OAI-TEST:167229 |
| institution | Universiti Teknologi Malaysia - OCEAN |
| language | |
| last_indexed | 2024-03-04T20:50:26Z |
| publishDate | 2007 |
| publisher | Skudai : Universiti Teknologi Malaysia, |
| record_format | dspace |
| spelling | KOHA-OAI-TEST:1672292020-12-19T17:04:28ZThe effect of different ge concentration on the characteristics of strain silicon MOSFET / Razali Ismail, 1960-, author Wong, Yah Jin, 1983-, author Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru) Skudai : Universiti Teknologi Malaysia,2007 PRZSL |
| spellingShingle | Razali Ismail, 1960-, author Wong, Yah Jin, 1983-, author Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru) The effect of different ge concentration on the characteristics of strain silicon MOSFET / |
| title | The effect of different ge concentration on the characteristics of strain silicon MOSFET / |
| title_full | The effect of different ge concentration on the characteristics of strain silicon MOSFET / |
| title_fullStr | The effect of different ge concentration on the characteristics of strain silicon MOSFET / |
| title_full_unstemmed | The effect of different ge concentration on the characteristics of strain silicon MOSFET / |
| title_short | The effect of different ge concentration on the characteristics of strain silicon MOSFET / |
| title_sort | effect of different ge concentration on the characteristics of strain silicon mosfet |
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