Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /

PRZSL

Bibliographic Details
Main Authors: Razali Ismail, 1960-, author, Ismail Saad, 1974-, author, Vijay Kumar Arora, author, Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru)
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Published: Skudai : Universiti Teknologi Malaysia, 2007
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author Razali Ismail, 1960-, author
Ismail Saad, 1974-, author
Vijay Kumar Arora, author
Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru)
author_facet Razali Ismail, 1960-, author
Ismail Saad, 1974-, author
Vijay Kumar Arora, author
Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru)
author_sort Razali Ismail, 1960-, author
collection OCEAN
description PRZSL
first_indexed 2024-03-04T20:50:29Z
format
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institution Universiti Teknologi Malaysia - OCEAN
language
last_indexed 2024-03-04T20:50:29Z
publishDate 2007
publisher Skudai : Universiti Teknologi Malaysia,
record_format dspace
spelling KOHA-OAI-TEST:1672472020-12-19T17:04:28ZInvestigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET / Razali Ismail, 1960-, author Ismail Saad, 1974-, author Vijay Kumar Arora, author Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru) Skudai : Universiti Teknologi Malaysia,2007 PRZSL
spellingShingle Razali Ismail, 1960-, author
Ismail Saad, 1974-, author
Vijay Kumar Arora, author
Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru)
Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /
title Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /
title_full Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /
title_fullStr Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /
title_full_unstemmed Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /
title_short Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET /
title_sort investigation on the effects of oblique rotating ion implantation ori for nanoscale vertical double gate nmosfet
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AT ismailsaad1974author investigationontheeffectsofobliquerotatingionimplantationorifornanoscaleverticaldoublegatenmosfet
AT vijaykumararoraauthor investigationontheeffectsofobliquerotatingionimplantationorifornanoscaleverticaldoublegatenmosfet
AT regionalconferenceonsolidstatescienceandtechnology23rd2007johorbahru investigationontheeffectsofobliquerotatingionimplantationorifornanoscaleverticaldoublegatenmosfet