SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

Includes bibliographical references and index

Bibliographic Details
Main Author: Cressler, John D.
Format:
Language:eng
Published: Boca Raton, FL : CRC Press, 2008
Subjects:
Bipolar transistors
Heterostructures
Silicon
Epitaxy

Similar Items