Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /

Thesis (Sarjana Kejuruteraan (Elektrik)) - Universiti Teknologi Malaysia, 2009

Bibliographic Details
Main Authors: Muhammad Faisal Ibrahim, 1984-, Abu Khari A'ain, supervisor, Fakulti Kejuruteraan Elektrik
Format:
Published: 2009
Subjects:
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author Muhammad Faisal Ibrahim, 1984-
Abu Khari A'ain, supervisor
Fakulti Kejuruteraan Elektrik
author_facet Muhammad Faisal Ibrahim, 1984-
Abu Khari A'ain, supervisor
Fakulti Kejuruteraan Elektrik
author_sort Muhammad Faisal Ibrahim, 1984-
collection OCEAN
description Thesis (Sarjana Kejuruteraan (Elektrik)) - Universiti Teknologi Malaysia, 2009
first_indexed 2024-03-05T00:05:03Z
format
id KOHA-OAI-TEST:231854
institution Universiti Teknologi Malaysia - OCEAN
last_indexed 2024-03-05T00:05:03Z
publishDate 2009
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spelling KOHA-OAI-TEST:2318542020-12-19T17:07:00ZDesign for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage / Muhammad Faisal Ibrahim, 1984- Abu Khari A'ain, supervisor Fakulti Kejuruteraan Elektrik 2009Thesis (Sarjana Kejuruteraan (Elektrik)) - Universiti Teknologi Malaysia, 2009SPSLMetal oxide semiconductors, Complementary
spellingShingle Metal oxide semiconductors, Complementary
Muhammad Faisal Ibrahim, 1984-
Abu Khari A'ain, supervisor
Fakulti Kejuruteraan Elektrik
Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /
title Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /
title_full Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /
title_fullStr Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /
title_full_unstemmed Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /
title_short Design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage /
title_sort design for testability for complementary metal oxide semiconductor analog circuit to detect parametric variation of gate leakage
topic Metal oxide semiconductors, Complementary
work_keys_str_mv AT muhammadfaisalibrahim1984 designfortestabilityforcomplementarymetaloxidesemiconductoranalogcircuittodetectparametricvariationofgateleakage
AT abukhariaainsupervisor designfortestabilityforcomplementarymetaloxidesemiconductoranalogcircuittodetectparametricvariationofgateleakage
AT fakultikejuruteraanelektrik designfortestabilityforcomplementarymetaloxidesemiconductoranalogcircuittodetectparametricvariationofgateleakage