Materials aspects of GaAs and InP based structures /

Materials aspects of GaAs and InP based structures /

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Bibliographic Details
Main Authors: 406493 Swanminathan, V., Macrander, A. T.
Format:
Published: Englewood Cliffs, New Jersey : Prentice-Hall, 1991
Subjects:
Semiconductors
Gallium arsenide semiconductors
Epitaxy

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