Materials aspects of GaAs and InP based structures /
16
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Englewood Cliffs, New Jersey : Prentice-Hall,
1991
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| Subjects: |
| _version_ | 1796650184690630656 |
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| author | 406493 Swanminathan, V. Macrander, A. T. |
| author_facet | 406493 Swanminathan, V. Macrander, A. T. |
| author_sort | 406493 Swanminathan, V. |
| collection | OCEAN |
| description | 16 |
| first_indexed | 2024-03-04T13:47:50Z |
| format | |
| id | KOHA-OAI-TEST:26482 |
| institution | Universiti Teknologi Malaysia - OCEAN |
| last_indexed | 2024-03-04T13:47:50Z |
| publishDate | 1991 |
| publisher | Englewood Cliffs, New Jersey : Prentice-Hall, |
| record_format | dspace |
| spelling | KOHA-OAI-TEST:264822020-12-19T16:56:21ZMaterials aspects of GaAs and InP based structures / 406493 Swanminathan, V. Macrander, A. T. Englewood Cliffs, New Jersey : Prentice-Hall,199116PSZJBLSemiconductorsGallium arsenide semiconductorsEpitaxyURN:ISBN:0133468267 |
| spellingShingle | Semiconductors Gallium arsenide semiconductors Epitaxy 406493 Swanminathan, V. Macrander, A. T. Materials aspects of GaAs and InP based structures / |
| title | Materials aspects of GaAs and InP based structures / |
| title_full | Materials aspects of GaAs and InP based structures / |
| title_fullStr | Materials aspects of GaAs and InP based structures / |
| title_full_unstemmed | Materials aspects of GaAs and InP based structures / |
| title_short | Materials aspects of GaAs and InP based structures / |
| title_sort | materials aspects of gaas and inp based structures |
| topic | Semiconductors Gallium arsenide semiconductors Epitaxy |
| work_keys_str_mv | AT 406493swanminathanv materialsaspectsofgaasandinpbasedstructures AT macranderat materialsaspectsofgaasandinpbasedstructures |