Hydrostatic pressure studies of semiconductor heterostructures and Schottky diodes /
Investigations of the role of various transport channels have been carried out for single GaAs/AIAs and double barrier AIAs/GaAs/AIAs structures. Curremt-voltage measurements have been performed in both forward and reverse biases at pressures up to 11 kbar. Measurements at room and liquuid niterogen...
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Bath, Eng. : University of Bath,
1995
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