Modeling of lightly doped drain (LDD) MOSFET for ciruit simulation [electronic resource]

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2007

Bibliographic Details
Main Authors:	188525 Mohamed Hanis Hassan, Fakulti Kejuruteraan Elektrik
Format:
Language:	eng
Published:	2007
Subjects:	Integrated circuits Metal oxide semiconductor field-effect transistors

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