PECVD silicon carbide deposited at different temperature /

PECVD silicon carbide deposited at different temperature /

PSZJBL

Detalles Bibliográficos
Autores principales:	B. Zatko, J. Huran, Hotovy, I., Pezoldt, J.
Formato:
Lenguaje:	eng
Materias:	Silicon carbide Semiconductors

Ejemplares similares

Advances in silicon carbide processing and applications /
por: Saddow, Stephen E., et al.
Publicado: (2004)

Silicon carbide /
por: 269121 Frantsevich, I. N., et al.
Publicado: (1970)

Silicon carbide '87 /
por: Silicon Carbide Symposium (1987 : Columbus, Ohio), et al.
Publicado: (c198)

Silicon carbide radiation detectors /
por: 532907 De Napoli, Marzio
Publicado: (c201)

Silicon carbide devices and technology /
por: Fraley, Bill
Publicado: (2015)

Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
por: Kimoto, Tsunenobu, 1963-, author, et al.
Publicado: (2014)

Silicon carbide and related materials 2008 : selected, peer reviewed papers from the 7th European conference on silicon carbide and related materials, September 7-11, Barcelona, Spain /
por: European Conference on Silicon Carbide and Related Materials (7th : 2008 : Barcelona, Spain), et al.
Publicado: (2009)

Porous silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications /
por: 462373 Feenstra, Randall M., et al.
Publicado: (2008)

Process technology for silicon carbide devices /
por: Zetterling, Carl-Mikael
Publicado: (2002)

Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /
por: International Conference on Silicon Carbide and Related Materials (13th : 2009 :, et al.
Publicado: (c201)

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007 /
por: International Conference on Silicon Carbide and Related Materials (12th : 2007 : Otsu-shi, Japan), et al.
Publicado: (c200)

Silicon carbide and related materials - 1999 (ICSCRM `99) /
por: Conference on Silicon Carbide and Rlated Mterials 1999 : North Carolina, U. S. A., et al.
Publicado: (2000)

Electrical discharge machining of siliconized silicon carbide using copper electrode /
por: Abdul Azeez Abdu Aliyu, 1980-, et al.
Publicado: (2014)

Low-temperature PECVD of nanodevice-grade nc-3C-SiC/
por: 496526 Cheng, Qijin, et al.

Parameter analysis on wire-cut EDM process of silicon carbide /
por: Mohammad Zulafif Rahim, 1987-, et al.
Publicado: (2011)

Parameter analysis on wire-cut EDM process of silicon carbide /
por: Muhammad Khairi Abdul Rahim, 1983-, et al.
Publicado: (2013)

Electrical discharge machining of silicon carbide using copper electrode /
por: Mazaherisarabi, Arash 1985-, et al.
Publicado: (2013)

Surface integrity study on silicon carbide machined by wire-cut EDM /
por: Lee, Cheng Sheng, 1988-, et al.
Publicado: (2012)

Electrical discharge machining of siliconized silicon carbide using copper electrode [electronic resource] /
por: Abdul Azeez Abdu Aliyu, 1980-
Publicado: (2014)

Formation of SiC by Vacuum Carbidization on Porous Silicon
por: M. V. Labanok, et al.
Publicado: (2022-10-01)

Parameter analysis on wire-cut EDM process of silicon carbide [electronic resource] /
por: Mohammad Zulafif Rahim, 1987-
Publicado: (2011)

Parameter analysis on wire-cut EDM process of silicon carbide [electronic resource] /
por: Muhammad Khairi Abdul Rahim, 1983-
Publicado: (2013)

Surface integrity study on silicon carbide machined by wire-cut EDM [electronic resource] /
por: Lee, Cheng Sheng, 1988-, et al.
Publicado: (2012)

Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition /
por: Haezah Munyati Jusoh, 1991-, author 639807, et al.
Publicado: (2020)

Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition /
por: Haezah Munyati Jusoh, 1991-, author 639807
Publicado: (2020)

Performance evaluation of wire electro discharge machining on silicon carbide /
por: Mohd. Yazid Abu, 1987-, et al.
Publicado: (2012)

Performance evaluation of wire electro discharge machining on silicon carbide [electronic resource] /
por: Mohd. Yazid Abu, 1987-
Publicado: (2012)

The effect of sol-gel technique on the silicon carbide particulate /
por: 383701 Ng, June Nee
Publicado: (2003)

Electrical discharge machining of silicon carbide using graphite electrode /
por: Muhammad Hafiz Adnan, 1979-, et al.
Publicado: (2013)

SiC materials and devices /
por: 378239 Shur, Michael, et al.
Publicado: (2007)

Electrical discharge machining of silicon carbide using graphite electrode [electronic resource) /
por: Muhammad Hafiz Adnan, 1979-
Publicado: (2013)

Development of non linear thermal expansion model for casted aluminium silicon carbide
por: Roni Sahroni, Taufik
Publicado: (2012)

Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques /
por: Muhamad Muizzudin Azali, 1993-, author 639862, et al.
Publicado: (2022)

Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques /
por: Muhamad Muizzudin Azali, 1993-, author 639862
Publicado: (2022)

Infrared and raman studies of radio frequency sputtered hydrogenated amorphous silicon carbide thin films /
por: 203186 Hasbullah A. Hasbi, et al.
Publicado: (2003)

Effect of ageing treatment on the mechanical properties of silicon carbide reinforced aluminium based metal matrix composite /
por: 399565 Tai, Siew Fong
Publicado: (2001)

Wear properties of aluminium silicon carbide (AISiCp), metal matrix composite /
por: 379708 Ahmad Zamri Mohamad
Publicado: (2004)

Silicon solid state devices and radiation detection /
por: Leroy, Claude, 1947-, et al.
Publicado: (c201)

Porous Silicon Carbide for MEMS
por: Markus Leitgeb, et al.
Publicado: (2017-08-01)

The effect of sol-gel technique on the silicon carbide particulate /
por: 384611 Phui, Yinn Ching
Publicado: (2004)