PECVD silicon carbide deposited at different temperature /

PECVD silicon carbide deposited at different temperature /

PSZJBL

Xehetasun bibliografikoak
Egile Nagusiak:	B. Zatko, J. Huran, Hotovy, I., Pezoldt, J.
Formatua:
Hizkuntza:	eng
Gaiak:	Silicon carbide Semiconductors

Antzeko izenburuak

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Formation of SiC by Vacuum Carbidization on Porous Silicon
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Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition /
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Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition /
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The effect of sol-gel technique on the silicon carbide particulate /
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Development of non linear thermal expansion model for casted aluminium silicon carbide
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Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques /
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Effect of ageing treatment on the mechanical properties of silicon carbide reinforced aluminium based metal matrix composite /
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Porous Silicon Carbide for MEMS
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The effect of sol-gel technique on the silicon carbide particulate /
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