PECVD silicon carbide deposited at different temperature /

PECVD silicon carbide deposited at different temperature /

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Bibliografische gegevens
Hoofdauteurs:	B. Zatko, J. Huran, Hotovy, I., Pezoldt, J.
Formaat:
Taal:	eng
Onderwerpen:	Silicon carbide Semiconductors

Gelijkaardige items

Advances in silicon carbide processing and applications /
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Silicon carbide /
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Silicon carbide '87 /
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Silicon carbide radiation detectors /
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Silicon carbide devices and technology /
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Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
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Silicon carbide and related materials 2008 : selected, peer reviewed papers from the 7th European conference on silicon carbide and related materials, September 7-11, Barcelona, Spain /
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Porous silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications /
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Process technology for silicon carbide devices /
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Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009 /
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Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007 /
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Silicon carbide and related materials - 1999 (ICSCRM `99) /
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Electrical discharge machining of siliconized silicon carbide using copper electrode /
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Low-temperature PECVD of nanodevice-grade nc-3C-SiC/
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Parameter analysis on wire-cut EDM process of silicon carbide /
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Parameter analysis on wire-cut EDM process of silicon carbide /
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Electrical discharge machining of silicon carbide using copper electrode /
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Surface integrity study on silicon carbide machined by wire-cut EDM /
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Electrical discharge machining of siliconized silicon carbide using copper electrode [electronic resource] /
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Formation of SiC by Vacuum Carbidization on Porous Silicon
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Parameter analysis on wire-cut EDM process of silicon carbide [electronic resource] /
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Parameter analysis on wire-cut EDM process of silicon carbide [electronic resource] /
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Surface integrity study on silicon carbide machined by wire-cut EDM [electronic resource] /
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Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition /
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Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition /
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Performance evaluation of wire electro discharge machining on silicon carbide /
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Performance evaluation of wire electro discharge machining on silicon carbide [electronic resource] /
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The effect of sol-gel technique on the silicon carbide particulate /
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Electrical discharge machining of silicon carbide using graphite electrode /
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SiC materials and devices /
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Electrical discharge machining of silicon carbide using graphite electrode [electronic resource) /
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Development of non linear thermal expansion model for casted aluminium silicon carbide
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Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques /
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Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques /
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Infrared and raman studies of radio frequency sputtered hydrogenated amorphous silicon carbide thin films /
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Effect of ageing treatment on the mechanical properties of silicon carbide reinforced aluminium based metal matrix composite /
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Wear properties of aluminium silicon carbide (AISiCp), metal matrix composite /
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Silicon solid state devices and radiation detection /
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Porous Silicon Carbide for MEMS
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The effect of sol-gel technique on the silicon carbide particulate /
door: 384611 Phui, Yinn Ching
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