Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Low-temperature PECVD of nanod...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Low-temperature PECVD of nanodevice-grade nc-3C-SiC/
PSZJBL
Bibliographic Details
Main Authors:
496526 Cheng, Qijin
,
Shuyan, Xu
,
Long, Jidong
,
Ostrikov, Kostya (Ken)
Format:
Language:
eng
Subjects:
Nanocrystals
Silicon carbide
Holdings
Description
Similar Items
Staff View
Similar Items
SiC materials and devices /
by: 378239 Shur, Michael, et al.
Published: (2007)
Effects of particle grading composition of SiC on properties of silicon-bonded SiC porous ceramics
by: Changzhi Zhao, et al.
Published: (2022-01-01)
Preparation and Characterization of Pure SiC Ceramics by HTPVT Induced by Seeding with SiC Nanoarrays
by: Yu-Chen Deng, et al.
Published: (2021-10-01)
Formation of SiC by Vacuum Carbidization on Porous Silicon
by: M. V. Labanok, et al.
Published: (2022-10-01)
Fabrication of ZrC/SiC, ZrO2/SiC and ZrO2 powders by carbothermal reduction of ZrSiO4
by: Ljiljana Kljajević, et al.
Published: (2011-06-01)