Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010

Bibliographic Details
Main Authors: Muhamad Syahir Tumaran, 1987-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik
Format:
Language:eng
Published: 2010
Subjects: