Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /
Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010
| Principais autores: | , , |
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| Formato: | |
| Idioma: | eng |
| Publicado em: |
2010
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| Assuntos: |
| _version_ | 1826447219922829312 |
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| author | Muhamad Syahir Tumaran, 1987- Razali Ismail, supervisor Fakulti Kejuruteraan Elektrik |
| author_facet | Muhamad Syahir Tumaran, 1987- Razali Ismail, supervisor Fakulti Kejuruteraan Elektrik |
| author_sort | Muhamad Syahir Tumaran, 1987- |
| collection | OCEAN |
| description | Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010 |
| first_indexed | 2024-03-05T11:08:16Z |
| format | |
| id | KOHA-OAI-TEST:452820 |
| institution | Universiti Teknologi Malaysia - OCEAN |
| language | eng |
| last_indexed | 2024-03-05T11:08:16Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | KOHA-OAI-TEST:4528202020-12-19T17:16:29ZTwo-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / Muhamad Syahir Tumaran, 1987- Razali Ismail, supervisor Fakulti Kejuruteraan Elektrik 2010engProject Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010Includes bibliographical referencesFEELECTLMetal-oxide semiconductor field-effect transistors |
| spellingShingle | Metal-oxide semiconductor field-effect transistors Muhamad Syahir Tumaran, 1987- Razali Ismail, supervisor Fakulti Kejuruteraan Elektrik Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / |
| title | Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / |
| title_full | Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / |
| title_fullStr | Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / |
| title_full_unstemmed | Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / |
| title_short | Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate / |
| title_sort | two dimensional analytical threshold voltage model of nanoscale strained silicon mosfet with tri material gate |
| topic | Metal-oxide semiconductor field-effect transistors |
| work_keys_str_mv | AT muhamadsyahirtumaran1987 twodimensionalanalyticalthresholdvoltagemodelofnanoscalestrainedsiliconmosfetwithtrimaterialgate AT razaliismailsupervisor twodimensionalanalyticalthresholdvoltagemodelofnanoscalestrainedsiliconmosfetwithtrimaterialgate AT fakultikejuruteraanelektrik twodimensionalanalyticalthresholdvoltagemodelofnanoscalestrainedsiliconmosfetwithtrimaterialgate |