Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /

Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010

书目详细资料
Main Authors:	Muhamad Syahir Tumaran, 1987-, Razali Ismail, supervisor, Fakulti Kejuruteraan Elektrik
格式:
语言:	eng
出版:	2010
主题:	Metal-oxide semiconductor field-effect transistors

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