Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate /

Míreanna comhchosúla

• Characterization of tri-material gate n-channel MOSFET /
  de réir: Nadia Othman, et al.
  Foilsithe / Cruthaithe: (2010)
• Design and characterisation of biaxial strained silicon N-channel MOSFET /
  de réir: 521413 Lau, Ngei Ong, et al.
  Foilsithe / Cruthaithe: (2010)
• Characterization of tri-material gate n-channel MOSFET [electronic resource] /
  de réir: 552022 Nadia Othman
  Foilsithe / Cruthaithe: (2010)
• Design and characterisation of strained silicon MOSFET /
  de réir: 275773 Goh, Eunice Shing Mei, et al.
  Foilsithe / Cruthaithe: (2007)
• Design and characterisation of biaxial strained silicon N-channel MOSFET [electronic resource] /
  de réir: 521413 Lau, Ngei Ong
  Foilsithe / Cruthaithe: (2010)