Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /

Thesis (Ph.D (Kejuruteraan Elektrik)) - Universiti Teknologi Malaysia, 2013

Bibliographic Details
Main Author: Budi Astuti, 1979-, author
Format:
Language:eng
Published: 2013
Subjects:
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author Budi Astuti, 1979-, author
author_facet Budi Astuti, 1979-, author
author_sort Budi Astuti, 1979-, author
collection OCEAN
description Thesis (Ph.D (Kejuruteraan Elektrik)) - Universiti Teknologi Malaysia, 2013
first_indexed 2024-03-05T14:38:06Z
format
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institution Universiti Teknologi Malaysia - OCEAN
language eng
last_indexed 2024-03-05T14:38:06Z
publishDate 2013
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spelling KOHA-OAI-TEST:5224542020-12-19T17:19:38ZGrowth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] / Budi Astuti, 1979-, author 2013engThesis (Ph.D (Kejuruteraan Elektrik)) - Universiti Teknologi Malaysia, 2013Includes bibliographical referencesPSZJBLTransistors
spellingShingle Transistors
Budi Astuti, 1979-, author
Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /
title Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /
title_full Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /
title_fullStr Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /
title_full_unstemmed Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /
title_short Growth of silicon carbide on graphene by hot mesh chemical vapor deposition [electronic resource] /
title_sort growth of silicon carbide on graphene by hot mesh chemical vapor deposition electronic resource
topic Transistors
work_keys_str_mv AT budiastuti1979author growthofsiliconcarbideongraphenebyhotmeshchemicalvapordepositionelectronicresource