Variable oxide thickness optimization and reliability analysis of gate-all-around floating gate for flash memory cell /

Variable oxide thickness optimization and reliability analysis of gate-all-around floating gate for flash memory cell /

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Bibliographic Details
Main Authors: Farah A. Hamid, 1990-, author 644819, Nurul Ezaila Alias, supervisor 227744, Razali Ismail, supervisor 225727, Zaharah Johari, 1985-, supervisor 230714, Fakulti Kejuruteraan. Sekolah Kejuruteraan Elektrik 619066
Format: text
Language:eng
Published: Johor Bahru, Johor : Universiti Teknologi Malaysia, 2020

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