Modeling and simulation of drain induced barrier lowering in short channel metal oxide semiconductor field effect transistor /

Thesis (Sarjana Kejuruteraan (Elektrik - Elektronik dan Telekomunikasi)) - Universiti Teknologi Malaysia, 2007

Bibliografske podrobnosti
Glavni avtor: 264557 Bambang Sudarman Osman
Format:
Jezik:eng
Izdano: Skudai : Universiti Teknologi Malaysia, 2007
Teme: