Diameter Optimization of Nano-scale SiNWT Based SRAM Cell

Diameter Optimization of Nano-scale SiNWT Based SRAM Cell

This paper represents diameter and logic voltage level optimizations of 6-Silicon Nanowire Transistors (SiNWT) SRAM. This study is to demonstrate diameter of nanowires effects at a different logic voltage level (Vdd) on the static characteristics of Nano-scale SiNWT Based SRAM Cell. Noise margins (N...

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Bibliografiska uppgifter
Huvudupphovsmän: Naif, Yasir Hashim, Hadi, Manap
Materialtyp: Conference or Workshop Item
Språk:English
Publicerad: 2015
Ämnen:
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Länkar:http://umpir.ump.edu.my/id/eprint/11635/1/ICCSCE2015%20Paper.pdf

Internet

http://umpir.ump.edu.my/id/eprint/11635/1/ICCSCE2015%20Paper.pdf

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