Optimization of Channel Length Nano-Scale Sinwt Based Sram Cell

Optimization of Channel Length Nano-Scale Sinwt Based Sram Cell

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This paper represents a channel length ratio optimization at a different high logic level voltage for 6-Silicon Nanowire Transistors (SiNWT) SRAM cell. This study is the first to demonstrate an optimized length ratio of nanowires with different Vdd of nano-scale SiNWT based SRAM cell. Noise margins...

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Bibliographic Details
Main Authors: Naif, Yasir Hashim, Alsibai, Mohammad Hayyan, Abdul Manap, Sulastri
Format: Conference or Workshop Item
Language:English
Published: EDP Sciences 2015
Subjects:
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/11734/1/ftech-2015-yasir-Optimization%20of%20Nanowires%20Ratio.pdf

Internet

http://umpir.ump.edu.my/id/eprint/11734/1/ftech-2015-yasir-Optimization%20of%20Nanowires%20Ratio.pdf

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