Optimization of Resistance Load in 4T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor
This study explores optimization of resistance load (R-Load) of four silicon nanowire transistor (SiNWT)-based static random-access memory (SRAM) cell. Noise margins and inflection voltage of butterfly characteristics with static power consumption of SRAM cell are used as limiting factors in this op...
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| Format: | Article |
| Language: | English English |
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American Scientific Publishers
2018
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| Online Access: | http://umpir.ump.edu.my/id/eprint/19249/1/17JNN-13956.pdf http://umpir.ump.edu.my/id/eprint/19249/7/ftech-2018-yasir.pdf |