Temperature characteristics of Gate all around nanowire channel Si-TFET
This paper study the impact of working temperature on the electrical characteristics of gate all around nanowire channel Si-TFET and examines the effect of working temperature on threshold voltage, transcondactance (gm), ION/IOFF ratio, drain induced barrier lowering (DIBL), and sub-threshold swing...
| Główni autorzy: | , , |
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| Format: | Conference or Workshop Item |
| Język: | English |
| Wydane: |
IOP Publishing
2021
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| Hasła przedmiotowe: | |
| Dostęp online: | http://umpir.ump.edu.my/id/eprint/32198/1/Temperature%20characteristics%20of%20Gate%20all%20around%20nanowire%20channel.pdf |