Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO<sub>X</sub>:SiO<sub>2</sub> Thin Films on Resistive Random Access Memory Devices

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO<sub>X</sub>:SiO<sub>2</sub> Thin Films on Resistive Random Access Memory Devices

Activation energy, bipolar resistance switching behavior, and the electrical conduction transport properties of ITO<sub>X</sub>:SiO<sub>2</sub> thin film resistive random access memory (RRAM) devices were observed and discussed. The ITO<sub>X</sub>:SiO<sub>2...

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Bibliographic Details
Main Authors: Kai-Huang Chen, Chien-Min Cheng, Na-Fu Wang, Ming-Cheng Kao
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
activation energy
bipolar resistance switching
resistive random access memory
electrical conduction mechanisms
ITO<sub>X</sub>:SiO<sub>2</sub>
Online Access:https://www.mdpi.com/2079-4991/13/15/2179

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https://www.mdpi.com/2079-4991/13/15/2179

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