Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Modeling of Self-Aligned Selector Based on Ultra-Thin Metal Oxide for Resistive Random-Access Memory (RRAM) Crossbar Arrays

Resistive random-access memory (RRAM) is a crucial element for next-generation large-scale memory arrays, analogue neuromorphic computing and energy-efficient System-on-Chip applications. For these applications, RRAM elements are arranged into Crossbar arrays, where rectifying selector devices are r...

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Bibliographic Details
Main Authors: Mikhail Fedotov, Viktor Korotitsky, Sergei Koveshnikov
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Nanomaterials
Subjects:
analog neural networks
crossbar
dielectric layers
memristor circuits
resistive RAM
selectors
Online Access:https://www.mdpi.com/2079-4991/14/8/668

Internet

https://www.mdpi.com/2079-4991/14/8/668

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