Voltage-controlled Hubbard spin transistor
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins. Going beyond classical spintronics, it enables the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2021-11-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.3.043142 |