In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching

In situ SiN/AlN/GaN HEMTs with regrown contacts using selective etching

We show AlN/GaN high electron mobility transistors with in situ SiN for passivation and regrown n ^+ GaN ohmic contacts using a selective etching process that is more suitable for device scaling. The regrown ohmic contacts have a clean and sharp edge definition with a contact resistance of 0.25 Ω·mm...

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Bibliographic Details
Main Authors: Can Cao, Sheikh Ifatur Rahman, Chris Chae, Jinwoo Hwang, Chandan Joishi, Siddharth Rajan, Wu Lu
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
GaN
high electron mobility transistor
ohmic contact regrowth
in situ passivation
selective etching
Online Access:https://doi.org/10.35848/1882-0786/adb09b

Internet

https://doi.org/10.35848/1882-0786/adb09b

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