Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering
The effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c)-polarity to aluminum...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5024996 |